IAUA250N04S6N008AUMA1
OPTIMOS POWER MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 6 IAUA250N04S6N008AUMA1 is an N-channel power MOSFET designed for demanding automotive applications. This device features a 40V drain-source voltage and a continuous drain current of 51A at 25°C (Ta), with a maximum power dissipation of 172W (Tc). The low on-resistance of 0.8mOhm is achieved at 100A and 10V gate-source voltage. The IAUA250N04S6N008AUMA1 utilizes a PG-HSOF-5-1 package, a 5-PowerSFN surface mount solution, and is qualified to AEC-Q101 standards, making it suitable for powertrain, chassis, and safety systems. Key electrical parameters include a gate charge of 109 nC at 10V and input capacitance of 7088 pF at 25V. It operates across a temperature range of -55°C to 175°C (TJ) with a maximum gate-source voltage of ±20V.
Additional Information
Series: OptiMOS™ 6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Ta) |
| Rds On (Max) @ Id, Vgs | 0.8mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 172W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 90µA |
| Supplier Device Package | PG-HSOF-5-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 109 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7088 pF @ 25 V |
| Qualification | AEC-Q101 |
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