IAUA250N04S6N007EAUMA1
MOSFET_(20V 40V)Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IAUA250N04S6N007EAUMA1 is a high-performance N-Channel MOSFET designed for demanding power applications. This component features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) capability of 435 A at 25°C (Tj). With a maximum power dissipation of 250 W (Tc), it is suitable for applications requiring robust thermal management. The low on-resistance (Rds On) of 0.7 mOhm at 100 A and 10 V, coupled with a gate charge (Qg) of 151 nC at 10 V, ensures efficient switching performance. The input capacitance (Ciss) is 9898 pF at 25 V. This MOSFET is available in a surface mount PG-HSOF-5-4 package, specifically the 5-PowerSFN variant, supplied on tape and reel. It operates within a temperature range of -55°C to 175°C (TJ), making it suitable for use in automotive and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 435A (Tj) |
| Rds On (Max) @ Id, Vgs | 0.7mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 130µA |
| Supplier Device Package | PG-HSOF-5-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 151 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9898 pF @ 25 V |
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