IAUA250N04S6N007AUMA1
MOSFET_(20V 40V) PG-HSOF-5Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IAUA250N04S6N007AUMA1 is an N-Channel OptiMOS™ Power MOSFET designed for high-efficiency power management applications. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of up to 435A (Tj) at 25°C. The low on-resistance (Rds On) is 0.7mOhm maximum at 100A and 10V, with a maximum power dissipation of 250W (Tc). The device utilizes a PG-HSOF-5-4 package, a 5-PowerSFN surface mount type, suitable for tape and reel packaging. Key electrical characteristics include a gate charge (Qg) of 151 nC maximum at 10V and an input capacitance (Ciss) of 9898 pF maximum at 25V. The operating temperature range is from -55°C to 175°C (TJ). This MOSFET technology is employed in automotive, industrial, and computing sectors requiring robust power switching.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 435A (Tj) |
| Rds On (Max) @ Id, Vgs | 0.7mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 130µA |
| Supplier Device Package | PG-HSOF-5-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 151 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9898 pF @ 25 V |
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