IAUA250N04S6N006AUMA1
MOSFET_(20V 40V) PG-HSOF-5Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IAUA250N04S6N006AUMA1, features a 40V drain-source voltage and a continuous drain current of 450A at 25°C (Tj). This device offers a low on-resistance of 0.64mOhm maximum at 100A and 10V Vgs. The PG-HSOF-5-4 package, a surface mount design, supports high power dissipation of 250W (Tc). Key electrical characteristics include a gate charge of 169 nC maximum at 10V Vgs and an input capacitance of 11064 pF maximum at 25V Vds. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for demanding applications in the automotive and industrial sectors. The IAUA250N04S6N006AUMA1 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 450A (Tj) |
| Rds On (Max) @ Id, Vgs | 0.64mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 145µA |
| Supplier Device Package | PG-HSOF-5-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 169 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11064 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
