IAUA250N04S6N005AUMA1
OPTIMOS POWER MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 6 N-Channel Power MOSFET, part number IAUA250N04S6N005AUMA1. This surface mount device features a Drain-to-Source Voltage (Vdss) of 40 V and a continuous Drain Current (Id) of 62 A at 25°C (Ta). The low on-resistance (Rds On) is specified at a maximum of 0.55 mOhm at 100 A and 10 V. With a maximum power dissipation of 250 W (Tc), this MOSFET is suitable for demanding applications. The Gate Charge (Qg) is 170 nC at 10 V, and the Input Capacitance (Ciss) is a maximum of 11144 pF at 25 V. The device operates within a temperature range of -55°C to 175°C (TJ). Packaged in PG-HSOF-5-5, this component is utilized in automotive, industrial power, and renewable energy systems.
Additional Information
Series: OptiMOS™ 6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Ta) |
| Rds On (Max) @ Id, Vgs | 0.55mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 145µA |
| Supplier Device Package | PG-HSOF-5-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11144 pF @ 25 V |
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