IAUA220N08S5N021AUMA1
MOSFET_(75V 120V( PG-HSOF-5Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Addressing the need for high-performance power switching, the Infineon Technologies N-Channel OptiMOS™ MOSFET, part number IAUA220N08S5N021AUMA1, offers a robust solution. This device features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 220A (Tj) at 25°C. With a maximum power dissipation of 211W (Tc), it is engineered for demanding thermal environments. The low on-resistance (Rds On) of 2.1mOhm is achieved at 100A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 105 nC at 10V and an input capacitance (Ciss) of 7219 pF at 40V. The IAUA220N08S5N021AUMA1 utilizes a PG-HSOF-5-4 package for surface mounting and operates within an extended temperature range of -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 220A (Tj) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 211W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 120µA |
| Supplier Device Package | PG-HSOF-5-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7219 pF @ 40 V |
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