IAUA210N10S5N024AUMA1
MOSFET_(75V 120V( PG-HSOF-5Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IAUA210N10S5N024AUMA1 is an N-Channel OptiMOS™ Power MOSFET designed for high-efficiency power conversion applications. This surface mount device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 210A at 25°C (Tj), with a maximum power dissipation of 238W (Tc). The device exhibits a low on-resistance (Rds On) of 2.4mOhm at 100A and 10V, facilitated by its advanced MOSFET technology. Key parameters include a Gate Charge (Qg) of 119 nC at 10V and an Input Capacitance (Ciss) of 8696 pF at 50V. The IAUA210N10S5N024AUMA1 is housed in a PG-HSOF-5-4 package and is supplied on tape and reel. Its operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in automotive and industrial power supplies, electric vehicle powertrains, and high-power switching regulators.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 210A (Tj) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 238W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 150µA |
| Supplier Device Package | PG-HSOF-5-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 119 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8696 pF @ 50 V |
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