IAUA200N04S5N010AUMA1
MOSFET N-CH 40V 200A 5HSOFManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™-5 N-Channel Power MOSFET, part number IAUA200N04S5N010AUMA1, features a 40V drain-source voltage and a continuous drain current of 200A at 25°C (Tc). This device offers a low on-resistance of 1mOhm maximum at 100A and 10V Vgs. The IAUA200N04S5N010AUMA1 is qualified to AEC-Q101 standards and manufactured using MOSFET technology. It is housed in a 5-HSOF PG-HSOF-5-1 surface mount package, supplied on tape and reel. With a maximum power dissipation of 167W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this component is suited for demanding automotive applications. Key electrical parameters include a gate charge of 132 nC (max) at 10V Vgs and input capacitance of 7650 pF (max) at 25V Vds.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 100µA |
| Supplier Device Package | PG-HSOF-5-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 132 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7650 pF @ 25 V |
| Qualification | AEC-Q101 |
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