IAUA200N04S5N010ATMA1
MOSFET_(20V 40V)Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™-5 IAUA200N04S5N010ATMA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 200A at 25°C (Tc), with a maximum power dissipation of 167W (Tc). The low on-resistance (Rds On) of 1mOhm at 100A and 10V gate-source voltage makes it highly efficient for power conversion and management tasks.
With a gate charge (Qg) of 132 nC at 10V and input capacitance (Ciss) of 7650 pF at 25V, this MOSFET is optimized for fast switching performance. The surface mount PG-HSOF-5-1 package (5-PowerSFN) ensures compact integration. Operating across a wide temperature range of -55°C to 175°C (TJ) and supporting gate-source voltages up to ±20V, it is suitable for automotive, industrial power supplies, and high-performance computing. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 100µA |
| Supplier Device Package | PG-HSOF-5-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 132 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7650 pF @ 25 V |
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