IAUA180N10S5N029AUMA1
MOSFET_(75V 120V( PG-HSOF-5Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IAUA180N10S5N029AUMA1, offers a 100V drain-source voltage and up to 180A continuous drain current at 25°C (TJ). This surface mount device utilizes the PG-HSOF-5-4 package, also known as 5-PowerSFN, and features a low Rds(on) of 2.9mOhm at 90A and 10V gate-source voltage. With a maximum power dissipation of 221W (Tc), it is designed for demanding applications. Key parameters include a gate charge (Qg) of 105 nC at 10V and input capacitance (Ciss) of 7673 pF at 50V. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for use in automotive and industrial power conversion systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tj) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 221W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 130µA |
| Supplier Device Package | PG-HSOF-5-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7673 pF @ 50 V |
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