IAUA180N08S5N026AUMA1
MOSFET_(75V 120V( PG-HSOF-5Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IAUA180N08S5N026AUMA1, is designed for high-performance applications. This surface mount device features a drain-source breakdown voltage (Vdss) of 80 V and a continuous drain current (Id) of 180 A at 25°C (Tj). The low on-resistance (Rds On) of 2.6 mOhm at 90 A and 10 V gate-source voltage (Vgs) contributes to efficient power handling, with a maximum power dissipation of 179 W (Tc). Key electrical characteristics include a gate charge (Qg) of 87 nC at 10 V and input capacitance (Ciss) of 5980 pF at 40 V. The IAUA180N08S5N026AUMA1 utilizes a PG-HSOF-5-4 package and is supplied on tape and reel. This component is suitable for demanding power conversion and management systems across various industries.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tj) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 179W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 100µA |
| Supplier Device Package | PG-HSOF-5-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5980 pF @ 40 V |
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