IAUA180N04S5N012AUMA1
MOSFET N-CH 40V 180A HSOF-5-1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™-5 series N-channel power MOSFET, part number IAUA180N04S5N012AUMA1. This device features a 40V drain-source voltage and a continuous drain current of 180A at 25°C (Tc). The low on-resistance of 1.2mOhm at 90A and 10V gate-source voltage, coupled with a maximum power dissipation of 125W (Tc), makes it suitable for demanding applications. Key parameters include a gate charge of 100 nC at 10V and input capacitance of 6158 pF at 25V. The MOSFET is housed in a PG-HSOF-5-2 package, a 5-PowerSFN surface mount type, supplied on tape and reel. Designed for operation within a temperature range of -55°C to 175°C (TJ), this component finds application in automotive, industrial power control, and server power supply systems.
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 70µA |
| Supplier Device Package | PG-HSOF-5-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6158 pF @ 25 V |
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