IAUA170N10S5N031AUMA1
MOSFET_(75V 120V( PG-HSOF-5Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IAUA170N10S5N031AUMA1 is an N-Channel OptiMOS™ Power MOSFET designed for high-performance applications. This device features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 170 A (Tj) at 25°C. The low on-resistance (Rds On) of 3.1 mOhm at 85 A and 10 V Vgs ensures minimal conduction losses. With a maximum power dissipation of 197 W (Tc), this MOSFET is suitable for demanding power management tasks. Key parameters include a gate charge (Qg) of 88 nC at 10 V and an input capacitance (Ciss) of 6405 pF at 50 V. The IAUA170N10S5N031AUMA1 is housed in a PG-HSOF-5-4 package, a 5-PowerSFN surface mount configuration, ideal for space-constrained designs. This component is utilized across various industries including automotive and industrial power systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tj) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 85A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 197W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 110µA |
| Supplier Device Package | PG-HSOF-5-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6405 pF @ 50 V |
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