IAUA120N04S5N014AUMA1
MOSFET_(20V 40V) PG-HSOF-5Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IAUA120N04S5N014AUMA1, offers a 40 V drain-source voltage and a continuous drain current of 120 A at 25°C (Tc). This surface-mount device features a low Rds(on) of 1.4 mOhm maximum at 60 A and 10 V, with a maximum power dissipation of 136 W (Tc). The device utilizes MOSFET technology and is supplied in a PG-HSOF-5-2 package, arranged on tape and reel (TR). Key electrical characteristics include a gate charge of 82 nC maximum at 10 V and input capacitance of 4828 pF maximum at 25 V. The operating temperature range is -55°C to 175°C (TJ) with a maximum gate-source voltage tolerance of ±20V. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 60µA |
| Supplier Device Package | PG-HSOF-5-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4828 pF @ 25 V |
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