BUZ80A
MOSFET N-CH 800V 3.6A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BUZ80A is an N-Channel SIPMOS® power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 3.6A at 25°C (Tc). The BUZ80A offers a maximum on-resistance (Rds On) of 3 Ohm at 2A and 10V Vgs, with a gate-source voltage (Vgs) tolerance of ±20V. Its power dissipation capability is 100W (Tc). The device utilizes MOSFET technology and is housed in a TO-220AB package, suitable for through-hole mounting. Key electrical characteristics include an input capacitance (Ciss) of 1350 pF at 25V and a gate threshold voltage (Vgs(th)) of 4V at 1mA. The operating temperature range is from -55°C to 150°C (TJ). This component is commonly employed in power supply units, lighting, and industrial control systems.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V |
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