BUZ73LHXKSA1
MOSFET N-CH 200V 7A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies BUZ73LHXKSA1 from the SIPMOS® series is an N-Channel power MOSFET designed for demanding applications. This component offers a continuous drain current of 7A at 25°C (Tc) and a drain-to-source voltage (Vdss) of 200V. It features a low on-resistance of 400mOhm maximum at 3.5A and 5V Vgs. With a maximum power dissipation of 40W (Tc), it is suitable for efficient power switching. The device has an input capacitance (Ciss) of 840 pF maximum at 25V and a gate threshold voltage (Vgs(th)) of 2V maximum at 1mA. The BUZ73LHXKSA1 utilizes MOSFET technology and is packaged in a standard PG-TO220-3 through-hole configuration, operating across a temperature range of -55°C to 150°C (TJ). This component finds application in industrial and automotive power management systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 3.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 25 V |