BUZ73H3046XKSA1
MOSFET N-CH 200V 7A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BUZ73H3046XKSA1, a SIPMOS® N-Channel power MOSFET, offers a 200V drain-to-source voltage and a continuous drain current of 7A at 25°C (Tc). This device features a maximum power dissipation of 40W (Tc) and a low on-resistance of 400mOhm maximum at 4.5A and 10V gate-source voltage. The input capacitance (Ciss) is rated at 530pF maximum at 25V. With a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 4V maximum at 1mA, the BUZ73H3046XKSA1 is suitable for through-hole mounting in a PG-TO220-3 package. Operating temperatures range from -55°C to 150°C (TJ). This component finds application in industrial power control and switching systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |