BUZ73ALHXKSA1
MOSFET N-CH 200V 5.5A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SIPMOS® N-Channel Power MOSFET, BUZ73ALHXKSA1, offers a 200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.5A at 25°C (Tc). This through-hole component features a maximum power dissipation of 40W (Tc) and a low on-resistance (Rds On) of 600mOhm at 3.5A and 5V gate-source voltage. The device utilizes advanced MOSFET technology and is packaged in a PG-TO220-3 configuration, suitable for applications in power supply, motor control, and industrial automation. Key parameters include a 2V threshold voltage (Vgs(th)) at 1mA and an input capacitance (Ciss) of 840pF at 25V. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 25 V |
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