BUZ73AE3046XK
MOSFET N-CH 200V 5.5A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies SIPMOS® BUZ73AE3046XK is an N-channel power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 5.5 A at 25°C (Tc). With a maximum power dissipation of 40 W (Tc), it is suitable for demanding power management tasks. The device exhibits a maximum on-resistance (Rds On) of 600 mOhm at 4.5 A and 10 V gate-source voltage. Key parameters include a gate-source voltage range of ±20 V and a threshold voltage (Vgs(th)) of 4 V at 1 mA. The input capacitance (Ciss) is rated at a maximum of 530 pF at 25 V. This through-hole component is housed in a PG-TO220-3 package and operates across an industrial temperature range of -55°C to 150°C (TJ). Its robust specifications make it applicable in power supplies, motor control, and general-purpose switching applications.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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