BUZ73A
MOSFET N-CH 200V 5.5A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® N-Channel Power MOSFET, part number BUZ73A, offers a 200V drain-source voltage and a continuous drain current of 5.5A at 25°C. This through-hole component features a maximum power dissipation of 40W. Key parameters include a low on-resistance of 600mOhm at 4.5A and 10V Vgs, and an input capacitance of 530pF at 25V. The operating temperature range is -55°C to 150°C. The BUZ73A is packaged in a PG-TO220-3 configuration and is suitable for applications in industrial and power supply sectors.
Additional Information
Series: SIPMOS®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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