BUZ32H3045AATMA1
MOSFET N-CH 200V 9.5A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® BUZ32H3045AATMA1 is an N-channel power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 9.5 A at 25°C (Tc), with a maximum power dissipation of 75 W (Tc). The Rds On (Max) is specified at 400 mOhm at 6 A and 10 V gate drive. It utilizes surface mount technology, housed in a PG-TO263-3-2 package, also known as TO-263AB. Key parameters include a low threshold voltage (Vgs(th)) of 4 V at 1 mA and an input capacitance (Ciss) of 530 pF (Max) at 25 V. This device is suitable for use in power conversion and industrial automation sectors. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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