BUZ32 H
MOSFET N-CH 200V 9.5A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies BUZ32-H is a SIPMOS® N-Channel Power MOSFET designed for robust performance in demanding applications. This component features a maximum drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 9.5 A at 25°C (Tc), with a maximum power dissipation of 75 W (Tc). The device exhibits a low on-resistance (Rds On) of 400 mOhm at 6 A and 10 V (Vgs). It is packaged in a TO-220-3 (PG-TO220-3) through-hole configuration, ensuring ease of mounting. Key electrical characteristics include an input capacitance (Ciss) of 530 pF at 25 V and a gate-source threshold voltage (Vgs(th)) of 4 V at 1 mA. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, motor control, and general-purpose switching applications across various industrial sectors.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |