BUZ32
MOSFET N-CH 200V 9.5A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SIPMOS® BUZ32 is an N-Channel power MOSFET designed for high-performance switching applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 9.5A at 25°C, with a maximum power dissipation of 75W (Tc). The BUZ32 offers a low on-resistance (Rds On) of 400mOhm at 6A and 10V gate drive, facilitating efficient power transfer. Its input capacitance (Ciss) is rated at 530 pF at 25V. The device is housed in a standard PG-TO220-3 package, enabling through-hole mounting. Operating over a temperature range of -55°C to 150°C, this MOSFET is suitable for industrial and automotive power control systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |