BUZ31L H
MOSFET N-CH 200V 13.5A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies BUZ31L-H is a SIPMOS® N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 200V drain-to-source voltage and a continuous drain current capability of 13.5A at 25°C (Tc), with a maximum power dissipation of 95W (Tc). The BUZ31L-H offers a low on-resistance of 200mOhm at 7A and 5V Vgs, facilitated by its advanced MOSFET technology. Its TO-220-3 package with through-hole mounting ensures robust integration into power supply circuits, motor control systems, and industrial automation equipment. The device operates reliably across a wide temperature range of -55°C to 150°C (TJ).
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 7A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 95W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |