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BUZ31L E3044A

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BUZ31L E3044A

MOSFET N-CH 200V 13.5A TO220-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies BUZ31L-E3044A is a SIPMOS® series N-Channel Power MOSFET designed for high-performance switching applications. This component features a drain-source breakdown voltage (Vdss) of 200V and a continuous drain current (Id) of 13.5A at 25°C (Tc), with a maximum power dissipation of 95W (Tc). The Rds(On) is specified at a maximum of 200mOhm at 7A and 5V gate-source voltage. Key parameters include an input capacitance (Ciss) of 1600 pF at 25V, a gate-source voltage (Vgs) limit of ±20V, and a gate threshold voltage (Vgs(th)) of 2V at 1mA. The device operates across a temperature range of -55°C to 150°C (TJ). Packaged in a PG-TO220-3-1 through-hole configuration and available on tape and reel, this MOSFET is suitable for use in power supplies, motor control, and industrial automation.

Additional Information

Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13.5A (Tc)
Rds On (Max) @ Id, Vgs200mOhm @ 7A, 5V
FET Feature-
Power Dissipation (Max)95W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackagePG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V

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