BUZ31HXKSA1
MOSFET N-CH 200V 14.5A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BUZ31HXKSA1 is an N-Channel SIPMOS® MOSFET, rated for a drain-source voltage of 200 V and a continuous drain current of 14.5 A at 25°C (Tc). This through-hole component features a maximum power dissipation of 95 W (Tc) and an on-resistance (Rds On) of 200 mOhm at 9 A and 5 V gate-source voltage. The input capacitance (Ciss) is a maximum of 1120 pF at 25 V. Operating across a temperature range of -55°C to 150°C (TJ), this device is housed in a PG-TO220-3 package. The BUZ31HXKSA1 is suitable for applications in industrial power supplies and motor control.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 9A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 95W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 25 V |
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