BUZ31H3046XKSA1
MOSFET N-CH 200V 14.5A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies BUZ31H3046XKSA1 is a SIPMOS® N-Channel Power MOSFET. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) capability of 14.5 A at 25°C. The device offers a maximum On-Resistance (Rds On) of 200 mOhm at 9 A and 5 V. With a maximum power dissipation of 95 W at 25°C, it is housed in a PG-TO262-3-1 package for through-hole mounting. Key parameters include an input capacitance (Ciss) of 1120 pF at 25 V and a gate threshold voltage (Vgs(th)) of 4 V at 1 mA. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in power supply units, industrial motor control, and lighting systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 9A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 95W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 25 V |
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