BUZ31 H3045A
MOSFET N-CH 200V 14.5A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BUZ31-H3045A is a SIPMOS® series N-Channel Power MOSFET featuring a Drain-to-Source Voltage (Vdss) of 200 V. This device offers a continuous drain current (Id) of 14.5 A at 25°C (Tc) and a maximum power dissipation of 95 W (Tc). The ON-resistance (Rds On) is specified at 200 mOhm maximum at 9 A and 10 Vgs. It operates with a gate-source voltage (Vgs) range of ±20 V and a threshold voltage (Vgs(th)) of 4 V maximum at 1 mA. The input capacitance (Ciss) is 1120 pF maximum at 25 V. Packaged in a TO-263-3, D2PAK surface mount configuration, this component is suitable for applications requiring high-voltage switching and power control, commonly found in industrial power supplies and motor control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 95W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 25 V |
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