BUZ31 E3046
MOSFET N-CH 200V 14.5A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® BUZ31-E3046 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) capability of 14.5A at 25°C (Tc). The BUZ31-E3046 exhibits a low on-resistance (Rds On) of 200mOhm maximum at 9A and 5V gate-source voltage. With a maximum power dissipation of 95W (Tc), it is suitable for demanding power conversion topologies in industrial and automotive sectors. The device is packaged in a TO-262-3 (PG-TO262-3) through-hole configuration, facilitating easy integration into printed circuit boards. Key parameters include an input capacitance (Ciss) of 1120pF maximum at 25V and a gate-source threshold voltage (Vgs(th)) of 4V maximum at 1mA. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 9A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 95W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 25 V |
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