BUZ31 E3045A
MOSFET N-CH 200V 14.5A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® BUZ31-E3045A is an N-Channel power MOSFET with a Vdss rating of 200 V and a continuous drain current of 14.5 A at 25°C (Tc). This device features a low Rds On of 200 mOhm maximum at 9 A, 5 V, and a Vgs(th) of 4 V at 1 mA. It is packaged in a TO-263-3, D2PAK surface mount package, commonly used in applications requiring efficient power switching. The maximum power dissipation is 95 W (Tc), and it operates within an ambient temperature range of -55°C to 150°C (TJ). Applications include power supplies, motor control, and general switching circuits in industrial and automotive segments. The input capacitance (Ciss) is a maximum of 1120 pF at 25 V.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 9A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 95W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 25 V |