BUZ31
MOSFET N-CH 200V 14.5A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies BUZ31 is an N-Channel SIPMOS® power MOSFET offering a drain-source voltage (Vdss) of 200V and continuous drain current (Id) of 14.5A at 25°C. This through-hole component, packaged in a PG-TO220-3, features a maximum on-resistance (Rds On) of 200mOhm at 9A and 5V gate-source voltage. With a maximum power dissipation of 95W (Tc) and a gate-source voltage range of ±20V, the BUZ31 is suitable for applications in industrial power supplies and motor control. The device includes an input capacitance (Ciss) of 1120 pF at 25V and operates across a temperature range of -55°C to 150°C.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 9A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 95W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS84PH6327XTSA2
MOSFET P-CH 60V 170MA SOT23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
