BUZ30AHXKSA1
MOSFET N-CH 200V 21A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies BUZ30AHXKSA1 is an N-Channel SIPMOS® Power MOSFET designed for high-performance applications. This device features a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 21 A at 25°C (Tc), with a maximum power dissipation of 125 W (Tc). The BUZ30AHXKSA1 offers a low on-resistance (Rds On) of 130 mOhm at 13.5 A and 10 V gate drive. Its input capacitance (Ciss) is specified at 1900 pF maximum at 25 V. This through-hole component is housed in a PG-TO220-3-1 package and operates within a temperature range of -55°C to 150°C. The BUZ30AHXKSA1 is suitable for use in power supply designs, motor control, and general-purpose switching applications.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |