BUZ30AH3045AATMA1
MOSFET N-CH 200V 21A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® BUZ30AH3045AATMA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 21A at 25°C (Tc). With a maximum power dissipation of 125W (Tc) and a low on-resistance of 130mOhm at 13.5A and 10V gate drive, it offers efficient power handling. The device is packaged in a TO-263-3, D2PAK surface mount case, suitable for high-density designs. Key parameters include an input capacitance (Ciss) of 1900 pF at 25 V and a gate-source threshold voltage (Vgs(th)) of 4V at 1mA. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is utilized in industrial, automotive, and power supply applications.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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