BUZ30A
MOSFET N-CH 200V 21A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies BUZ30A is a SIPMOS® series N-channel power MOSFET designed for demanding applications. This component features a Vds of 200 V and a continuous drain current (Id) of 21A (Tc) with a maximum power dissipation of 125W (Tc). The BUZ30A offers a low on-resistance (Rds On) of 130mOhm at 13.5A and 10V Vgs, facilitating efficient switching. Its TO-220-3 package with through-hole mounting is suitable for robust thermal management. Key electrical characteristics include an input capacitance (Ciss) of 1900 pF at 25 V and a gate-source voltage (Vgs) range of ±20V, with a threshold voltage (Vgs(th)) of 4V at 1mA. This MOSFET is utilized in industrial power supplies, motor control, and automotive systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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