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BTS282ZAKSA1

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BTS282ZAKSA1

MOSFET N-CH 49V 80A TO220-7

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies TEMPFET® BTS282ZAKSA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 49V drain-source voltage and a continuous drain current capability of 80A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The device offers a low on-resistance of 6.5mOhm at 36A and 10V Vgs. Integrated temperature sensing is provided via a built-in diode. The BTS282ZAKSA1 utilizes a Metal Oxide technology and is housed in a TO-220-7 package, suitable for through-hole mounting. Key parameters include a gate charge of 232 nC at 10V and input capacitance of 4800 pF at 25V. Operating temperature ranges from -40°C to 175°C (TJ). This device finds application in automotive, industrial, and power management systems requiring robust thermal monitoring and high current handling.

Additional Information

Series: TEMPFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-7
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs6.5mOhm @ 36A, 10V
FET FeatureTemperature Sensing Diode
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id2V @ 240µA
Supplier Device PackageP-TO220-7-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)49 V
Gate Charge (Qg) (Max) @ Vgs232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4800 pF @ 25 V

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