BTS282Z E3230
MOSFET N-CH 49V 80A TO220-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies TEMPFET® BTS282Z-E3230 is an N-Channel Power MOSFET designed for high-current applications. This component features a Drain-Source Voltage (Vdss) of 49V and a continuous Drain Current (Id) of 80A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 6.5mOhm maximum at 36A and 10V Vgs. A key characteristic of this TEMPFET® is its integrated temperature sensing diode, facilitating thermal monitoring. With a maximum power dissipation of 300W (Tc), it is suitable for demanding applications across various industries. The BTS282Z-E3230 is provided in a P-TO220-7-230 package with a through-hole mounting type. Key electrical parameters include a Gate Charge (Qg) of 232 nC maximum at 10V Vgs and an input capacitance (Ciss) of 4800 pF maximum at 25V Vds. The operating temperature range is -40°C to 175°C (TJ).
Additional Information
Series: TEMPFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-7 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 36A, 10V |
| FET Feature | Temperature Sensing Diode |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 240µA |
| Supplier Device Package | P-TO220-7-230 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 49 V |
| Gate Charge (Qg) (Max) @ Vgs | 232 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
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