BTS282Z E3180A
MOSFET N-CH 49V 80A TO220-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies TEMPFET® N-Channel MOSFET, part number BTS282Z-E3180A, offers a 49V drain-source voltage and 80A continuous drain current. This device features integrated temperature sensing via a diode, providing critical thermal feedback. With a low on-resistance of 6.5mOhm at 36A and 10V Vgs, it is optimized for efficient power switching. The BTS282Z-E3180A boasts a maximum power dissipation of 300W and a high operating temperature range of -40°C to 175°C. Key electrical parameters include a gate charge of 232 nC and input capacitance of 4800 pF. Packaged in a TO-263-8 (D2PAK) configuration, it is supplied on tape and reel. Applications include automotive systems, industrial automation, and power supply units.
Additional Information
Series: TEMPFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 36A, 10V |
| FET Feature | Temperature Sensing Diode |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 240µA |
| Supplier Device Package | PG-TO220-7-180 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 49 V |
| Gate Charge (Qg) (Max) @ Vgs | 232 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
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