BTS247Z E3062A
MOSFET N-CH 55V 33A TO263-5Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies TEMPFET® BTS247Z-E3062A is an N-Channel MOSFET designed for demanding applications. This device features a 55V drain-source voltage rating and a continuous drain current capability of 33A at 25°C (Tc), with a maximum power dissipation of 120W (Tc). The BTS247Z-E3062A offers a low on-resistance of 18mOhm maximum at 12A and 10V, facilitated by a gate drive range of 4.5V to 10V. Key features include an integrated temperature sensing diode for thermal monitoring. With a gate charge of 90 nC maximum at 10V and input capacitance of 1730 pF maximum at 25V, this MOSFET is suitable for power management and switching applications across automotive and industrial sectors. It is supplied in a surface mount PG-TO263-5-2 package and operates within a temperature range of -40°C to 175°C (TJ).
Additional Information
Series: TEMPFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-5, D2PAK (4 Leads + Tab), TO-263BB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 12A, 10V |
| FET Feature | Temperature Sensing Diode |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 90µA |
| Supplier Device Package | PG-TO263-5-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 25 V |
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