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BTS244ZNKSA1

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BTS244ZNKSA1

MOSFET N-CH 55V 35A TO220-5-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies BTS244ZNKSA1 is an N-Channel TEMPFET® MOSFET with a drain-source voltage (Vdss) of 55V. This component offers a continuous drain current (Id) of 35A at 25°C and a maximum power dissipation of 170W (Tc). The BTS244ZNKSA1 features a low on-resistance (Rds On) of 13mOhm at 19A and 10V gate-source voltage. It includes integrated temperature sensing diode functionality. The device operates over an extended temperature range of -40°C to 175°C (TJ). Packaged in a PG-TO220-5-3 through-hole configuration, this MOSFET is suitable for applications in automotive and industrial power management systems. Key parameters include a gate charge (Qg) of 130 nC at 10V and input capacitance (Ciss) of 2660 pF at 25V.

Additional Information

Series: TEMPFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-5 Formed Leads
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs13mOhm @ 19A, 10V
FET FeatureTemperature Sensing Diode
Power Dissipation (Max)170W (Tc)
Vgs(th) (Max) @ Id2V @ 130µA
Supplier Device PackagePG-TO220-5-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2660 pF @ 25 V

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