BTS244ZE3062AATMA1
N-CHANNEL POWER MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BTS244ZE3062AATMA1 is an N-Channel Power MOSFET designed for demanding automotive and industrial applications. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 35A at 25°C (Tc), with a maximum power dissipation of 170W (Tc). The low on-resistance (Rds On) of 13mOhm at 19A and 10V (Vgs) ensures efficient power transfer. Key parameters include a Gate Charge (Qg) of 130 nC at 10V and input capacitance (Ciss) of 2660 pF at 25V. The BTS244ZE3062AATMA1 is packaged in a PG-TO263-5-2 (TO-263-5, D2PAK) for surface mounting, operating across a temperature range of -40°C to 175°C (TJ). Drive voltage capabilities range from 4.5V to 10V, with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 2V at 130µA.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-5, D2PAK (4 Leads + Tab), TO-263BB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 130µA |
| Supplier Device Package | PG-TO263-5-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2660 pF @ 25 V |
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