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BTS244Z E3062A

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BTS244Z E3062A

MOSFET N-CH 55V 35A TO220-5-62

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies N-Channel MOSFET, TEMPFET® series, part number BTS244Z-E3062A. This device features a 55V drain-to-source voltage and a continuous drain current of 35A (Tc) at 25°C, with a maximum power dissipation of 170W (Tc). The low on-resistance is rated at 13mOhm maximum at 19A and 10V Vgs. It incorporates a temperature sensing diode for integrated thermal management. Key parameters include input capacitance of 2660pF (max) at 25V and gate charge of 130nC (max) at 10V. The device is supplied in a PG-TO220-5-62 package, suitable for surface mounting. Operating temperature range is -40°C to 175°C (TJ). This component finds application in automotive and industrial power management systems.

Additional Information

Series: TEMPFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs13mOhm @ 19A, 10V
FET FeatureTemperature Sensing Diode
Power Dissipation (Max)170W (Tc)
Vgs(th) (Max) @ Id2V @ 130µA
Supplier Device PackagePG-TO220-5-62
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2660 pF @ 25 V

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