BTS240AHKSA1
N-CHANNEL POWER MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BTS240AHKSA1 is an N-channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 50 V and a continuous Drain current (Id) of 58 A at 25°C, with a maximum power dissipation of 170W. The Rds On is specified at a maximum of 18 mOhm at 47 A and 10 V gate-source voltage. Input capacitance (Ciss) is 4300 pF at 25 V. The device operates within a temperature range of -55°C to 150°C (TJ) and utilizes a through-hole mounting type within a PG-TO218-3-1 package. It is qualified to AEC-Q101 standards, making it suitable for automotive and industrial applications requiring robust power switching. The maximum gate-source voltage is ±20V, and the threshold voltage (Vgs(th)) is a maximum of 3.5V at 1mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-218-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 47A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 170W |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | PG-TO218-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 25 V |
| Qualification | AEC-Q101 |
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