BTS132E3045ANTMA1
N-CHANNEL POWER MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies TEMPFET® BTS132E3045ANTMA1 is an N-channel Power MOSFET designed for high-current switching applications. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 24A at 25°C (Tc), with a maximum power dissipation of 75W. Its low on-resistance (Rds On) of 65mOhm at 12A and 4.5V gate drive makes it suitable for efficient power management. The BTS132E3045ANTMA1 utilizes advanced MOSFET technology and is housed in a PG-TO220-3-5 package for surface mounting. Key electrical characteristics include an input capacitance (Ciss) of 1400 pF at 25V and a gate-source threshold voltage (Vgs(th)) of 2.5V at 1mA. Operating across a wide temperature range from -55°C to 150°C, this component finds application in automotive, industrial automation, and power supply systems.
Additional Information
Series: TEMPFET®RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 12A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 75W |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | PG-TO220-3-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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