BTS121ANKSA1
MOSFET N-CH 100V 22A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' TEMPFET® BTS121ANKSA1 is an N-Channel Power MOSFET designed for robust performance. This device offers a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 22 A at 25°C (Tc), with a maximum power dissipation of 95 W (Tc). The BTS121ANKSA1 features a low on-resistance (Rds On) of 100 mOhm at 9.5 A and 4.5 V, enabling efficient power switching. It operates across a wide temperature range from -55°C to 150°C (TJ). The component is housed in a TO-220-3 package with a through-hole mounting type, suitable for applications in automotive and industrial power management systems. Key parameters include an input capacitance (Ciss) of 1500 pF at 25 V and a gate-source threshold voltage (Vgs(th)) of 2.5 V at 1 mA. The maximum gate-source voltage (Vgs) is ±10 V.
Additional Information
Series: TEMPFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 9.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 95W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
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