BTS121AE3045ANTMA1
MOSFET N CH 100V 22A TO-220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies TEMPFET® N-Channel MOSFET, part number BTS121AE3045ANTMA1, offers a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 22A at 25°C (Tc). This device features a maximum on-resistance (Rds On) of 100mOhm at 9.5A and 4.5V Vgs, with a gate threshold voltage (Vgs(th)) of 2.5V at 1mA. Designed with a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package, this surface mount component is suitable for high-power applications. Its maximum power dissipation is rated at 95W (Tc). The BTS121AE3045ANTMA1 is utilized across various industries including automotive, industrial automation, and power management systems, demanding robust and efficient switching solutions. This MOSFET operates within an extended temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TEMPFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 9.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 95W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | PG-TO220-3-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
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