BTS115ANKSA1
MOSFET N-CH 50V 15.5A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies TEMPFET® BTS115ANKSA1 is an N-channel power MOSFET designed for robust switching applications. This component offers a 50V drain-source voltage and a continuous drain current of 15.5A at 25°C. Featuring a low on-resistance of 120mOhm maximum at 7.8A and 4.5V gate-source voltage, it optimizes power efficiency. The device supports a gate-source voltage range of ±10V and has a threshold voltage of 2.5V maximum at 1mA. With a maximum power dissipation of 50W at 25°C case temperature, the BTS115ANKSA1 is suitable for use in automotive, industrial automation, and power supply applications. It is packaged in a TO-220AB through-hole configuration and operates across an extended temperature range of -55°C to 150°C.
Additional Information
Series: TEMPFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 7.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 50 V |
| Input Capacitance (Ciss) (Max) @ Vds | 735 pF @ 25 V |
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