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BTS114AE3045A

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BTS114AE3045A

N-CHANNEL POWER MOSFET

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies TEMPFET® BTS114AE3045A is an N-channel power MOSFET designed for surface-mount applications. This component features a Drain-Source Voltage (Vdss) of 50V and a continuous drain current (Id) capability of 17A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 100mOhm at 9A and 10V gate drive. With a maximum power dissipation of 50W, it is suitable for demanding thermal environments. The input capacitance (Ciss) is specified as a maximum of 600 pF at 25V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is housed in a PG-TO220-3-5 package. Its robust construction and performance characteristics make it a viable option for automotive, industrial control, and power management applications.

Additional Information

Series: TEMPFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)50W
Vgs(th) (Max) @ Id3.5V @ 1mA
Supplier Device PackagePG-TO220-3-5
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)50 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 25 V

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