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BTS114A E3045A

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BTS114A E3045A

N-CHANNEL POWER MOSFET

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies TEMPFET® BTS114A-E3045A is an N-channel power MOSFET designed for high-efficiency switching applications. This device features a drain-source voltage (Vdss) of 50 V and a continuous drain current (Id) capability of 17A at a case temperature of 25°C. With a maximum on-resistance (Rds On) of 100mOhm at 9A and 10V, it provides low conduction losses. The BTS114A-E3045A supports a gate-source voltage (Vgs) range of ±20V and has a threshold voltage (Vgs(th)) of 3.5V at 1mA. The component has an input capacitance (Ciss) of 600 pF at 25 V. It is housed in a PG-TO220-3-5 package, suitable for surface mount applications, and offers a maximum power dissipation of 50W. This MOSFET operates within an ambient temperature range of -55°C to 150°C. Typical industries utilizing this component include automotive and industrial automation.

Additional Information

Series: TEMPFET®RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)50W
Vgs(th) (Max) @ Id3.5V @ 1mA
Supplier Device PackagePG-TO220-3-5
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)50 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 25 V

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