BTS113ANKSA1
MOSFET N-CH 60V 11.5A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies TEMPFET® BTS113ANKSA1 is an N-Channel Power MOSFET designed for robust switching applications. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 11.5A at 25°C (Tc), with a maximum power dissipation of 40W (Tc). The BTS113ANKSA1 offers a low on-resistance (Rds On) of 170mOhm at 5.8A and 4.5V (Vgs), indicative of efficient power handling. Key parameters include a gate threshold voltage (Vgs(th)) of 2.5V at 1mA and an input capacitance (Ciss) of 560 pF at 25V. It supports a gate-source voltage (Vgs) range of ±10V and operates across a wide industrial temperature range of -55°C to 150°C (TJ). The component is housed in a through-hole TO-220AB package, commonly utilized in automotive and industrial power management systems.
Additional Information
Series: TEMPFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 5.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 25 V |
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