BTS113AE3045ANTMA1
MOSFET N-CH 60V 11.5A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies TEMPFET® N-Channel MOSFET, part number BTS113AE3045ANTMA1, offers a 60V drain-source breakdown voltage and a continuous drain current capability of 11.5A (Tc). This device features a low on-resistance of 170mOhm maximum at 5.8A and 4.5V Vgs. With a maximum power dissipation of 40W (Tc), it is suitable for applications requiring robust thermal management. The BTS113AE3045ANTMA1 is constructed using MOSFET technology and is supplied in a TO-220AB package, compatible with surface mounting. Key parameters include a maximum gate-source voltage (Vgs) of ±10V and a threshold voltage (Vgs(th)) of 2.5V maximum at 1mA. Typical applications for this component include automotive systems and industrial power control.
Additional Information
Series: TEMPFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 5.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 25 V |
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